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其他

HT73XX-12V

概述
HT73XX系列是一款實用CMOS技術(shù)開發(fā)的低壓差、高精度輸出電壓、超低功耗電流的正電壓型電壓穩(wěn)壓電路。由于內(nèi)置有低通態(tài)電阻晶體管，因而如數(shù)輸出壓差低，同事具有高輸入電壓承受能力，最高工作電壓可達12V，適合需要較高耐壓的應(yīng)用電路。

特點
● 輸出電壓精度高：精度±3%
● 超低功耗電流：典型值3uA
● 低輸出電壓溫漂：典型值50 ppm/℃
● 高輸入耐壓：升至12V保持輸出穩(wěn)壓
● 封裝形式：TO-92、SOT89-3、SOT23-3

應(yīng)用
● 使用電池供電設(shè)備的穩(wěn)壓電源
● 家電玩具的穩(wěn)壓電源
● 便攜式醫(yī)用儀器穩(wěn)壓電源
● 通信設(shè)備的穩(wěn)壓電源
● 移動電話用的穩(wěn)壓電源

HT71XXH-24V

概述
HT71XXH系列是采用CMOS工藝制造，低功耗的高壓穩(wěn)壓器，最高輸入電壓可達25V，輸出電壓范圍為1.5V～12.0V。它具有高精度的輸出電壓、極低的供電電流、極低的跌落電壓等特點。

特點
● 低功耗：≤3μA
● 低跌落電壓：典型值0.1V
● 低溫漂：典型值50 ppm/℃
● 高的輸入電壓：最高可達25V
● 高精度的輸出電壓：容差為+3%
● 封裝形式：SOT89-3、SOT23-3 、TO-92

應(yīng)用
● 電池等電源的供電設(shè)備 
● 各種通信設(shè)備
● 音頻/視頻設(shè)備 
● 安防監(jiān)控設(shè)備

PT6006

概述
PT6006是一款脈寬調(diào)制降壓型電源管理集成電路，其自身具有恒流恒壓輸出功能，并采用非同步整流降壓技術(shù)，轉(zhuǎn)換效率最高可達90%。
PT6006內(nèi)置了線損補償功能并且提供固定電壓輸出，同時因為具有可調(diào)節(jié)的過流保護功能，故其可應(yīng)用在DC-DC 降壓型電源管理應(yīng)用中。
PT6006內(nèi)部集成多種保護功能，例如：VDD 過壓保護、VDD 欠壓鎖定、過溫保護、過流保護和短路保護功能，其封裝采用SOP-8，封裝體積小，外圍器件少，適用于小體積的電源應(yīng)用方案。

特點
● 輸入電壓范圍: 8V-36V
● 固定工作頻率: 150KHZ
● 固定輸出電壓：5V
● 最大輸出電流： 3.1A
●輸出電壓精度: ? 3%
● 輸出電流精度: ? 5%
● 內(nèi)置可調(diào)節(jié)線損補償功能
●內(nèi)置輸出過壓保護功能
● 內(nèi)置輸入欠壓保護功能
● 內(nèi)置軟啟動功能
● 內(nèi)置過溫保護功能
● 內(nèi)置過流保護功能
●內(nèi)置輸出短路保護功能
● 采用SOP-8 封裝

應(yīng)用
● 車載充電器
● DC-DC 電源

PT6221

GENERAL DESCRIPTION
The PT6221 is a constant frequency,
6-pin SOT23 current mode step-up converter intended for small, low power
applications. The PT6221 switches at
1MHz and allows the use of tiny, low cost
capacitors and inductors 2mm or less in height. Internal soft-start results in small inrush current and extends battery life.
The PT6221 features automatic shifting
to pulse frequency modulation mode at
light loads. The PT6221 includes
under-voltage lockout, current limiting,
and thermal overload protection to prevent damage in the event of an output overload. The PT6221 is available in a
small 6-pin SOT-23 package.

FEATURES
● Integrated 80mΩ Power MOSFET
● 2V to 24V Input Voltage
● 1MHz Fixed Switching Frequency
● Internal 4A Switch Current Limit
● Adjustable Output Voltage
● Internal Compensation
● Up to 28V Output Voltage
●Automatic Pulse Frequency Modulation
● Mode at Light Loads
● up to 97% Efficiency
● Available in a 6-Pin SOT23-6 Package

APPLICATIONS
●Battery-Powered Equipment
●Set-Top Boxes
●White LED Driver
●DSL and Cable Modems and Routers
●Networking cards powered from PCI or PCI express slots

PT3306

概述
PT3306是一款高效率、低功耗、低紋波、高工作頻率的PFM 同步升壓DC/DC 變換器。僅需要三個外圍元件，就可將低輸入電壓升壓到所需的工作電壓，可通過內(nèi)部修調(diào)電路（步進0.1V）來獲得所需的輸出電壓，內(nèi)置的同步開關(guān)管可使效率最高可達95%，工作于PFM 模式，可有效降低輕載模式下的紋波，具有極低的靜態(tài)電流特別適合于手持電子設(shè)備應(yīng)用，采用SOT23 封裝。

特性
■最高效率：95%
■最高工作頻率：300KHZ
■低靜態(tài)電流：15uA
■輸出電壓可選：2.5V～3.6V
■輸出精度：正負(fù)2.5%
■寬輸入電壓范圍：0.9V～3.6V
■低紋波，低噪音

應(yīng)用領(lǐng)域:
1～2個干電池的電子設(shè)備。
電子詞典、數(shù)碼相機、LED手電筒、LED燈、血壓計、MP3、遙控玩具、無線耳機、無線鼠標(biāo)鍵盤、醫(yī)療器械、防丟器、汽車防盜器、充電器、VCR、PDA等手持電子設(shè)備。

PT8822

VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery

PT2010E

N-Channel Enhancement Mode Power MOSFET
Description
The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM application
●Load switch

PTY8726

Features
? Low On-Resistance
? Fast Switching
? 100% Avalanche Tested
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free, RoHS Compliant
Description
PTY8726 designed by the trench process
techniques to achieve extremely low on-resistance.
Additional features of this design can operate at
high junction temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.

PTU06N02

Features
? Very Low RDS(on) @ 2.5V Logic.
? V Logic Level Control
? TO-251 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PTI03N02

Features
? Very Low RDS(on) @ 2.5V Logic.
? 3.3V Logic Level Control
? TO-262 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
BVDSS 20 V
ID 120 A
RDSON@VGS=4.5V 2.6 mΩ
RDSON@VGS=2.5V 3.8 mΩ

SI2307

-30V P-Channel Enhancemen t M o d e M O S F E T
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP152A12COMR

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A＜130mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A＜190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP151A13COMR

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3.6A＜85mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A＜115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

FDN335N

20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

FDN306P

-12V P-Channel Enhancemen t ModeMOSFET
Features
? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
? Fast switching speed
Applications
? Battery management
? Load switch
? Battery protection

BSS84

-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON), Vgs@-10V, Ids@-0.1A＜8Ω
RDS(ON), Vgs@-5, Ids@-0.1A ＜10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

2SC3356(4G）

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

PTS9926B

Features
? BVDSS＞20V, RDS(ON)=11mΩ(Typ)@VGS=10V
? Low On-Resistance
? Fast Switching
    encapsulation：SOP-8
? Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.

PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
? Very Low RDS(on) @ 3.3V Logic.
? 3.3V Logic Level Control
? SOP8 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired

PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators

PT89S003F


工作電壓：2.4V-5.5V
工作溫度：-40~85°C
封裝：PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
內(nèi)核：高速1T 8051
FIash ROM：16 Kbytes Flash ROM(MOVC禁止尋址0000H~00FFH)可重復(fù)寫入1萬次
IAP：可code option 成0K、0.5K、1K、或16K
EEPROM：獨立的128bytes，可重復(fù)寫入10萬次，10年以上保存壽命
SRAM：內(nèi)部256bytes+外部256bytes
系統(tǒng)時鐘（fsys）：內(nèi)建高頻16MHz振蕩器（FHRC）
作為系統(tǒng)時鐘源時，fsys可通過編程器選擇設(shè)定為16/8/4/1.33MHz
頻率誤差：跨越（2.9V~5.5V）及（-20~85°C）應(yīng)用環(huán)境，不超過±1%
內(nèi)置高頻晶體振蕩器電路
可外接2~16MHz振蕩器
作為系統(tǒng)時鐘源時，fsys可通過編程器選擇使用外接晶振/1/2/4/12這四種分頻中的一種
IC系統(tǒng)時鐘（fsys）對應(yīng)的工作電壓范圍：
＞12MHz@2.9~5.5V
≤12MHz@2.4~5.5V

PTN4559

封裝形式：PDFN5X6
類型：N+P
ESD Diode：否/否
VDS (V)：60/-60
VGS (V)：±20/±20
VTH (V)Typ：1.9/-2.5
ID* (A) 25°C：6/-5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：60/75
RDS(ON) (mΩ max) at VGS= 4.5V：80/95
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：風(fēng)扇

PTS4559

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：60/-60
VGS (V)：±20/±20
VTH (V)Typ：1.9/-2.5
ID* (A) 25°C：6/-5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：60/75
RDS(ON) (mΩ max) at VGS= 4.5V：80/95
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：風(fēng)扇

PTS4614

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：40/-40
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：7/-6
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：-
RDS(ON) (mΩ max) at VGS= 4.5V：20/35
RDS(ON) (mΩ max) at VGS= 2.5V：30/45
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：風(fēng)扇

PTS4616

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：8/-7
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：20/28
RDS(ON) (mΩ max) at VGS= 4.5V：25/40
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：風(fēng)扇

PTF640

封裝形式：TO-220F
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：18
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：0.18
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：HID SMPS

PTP640

封裝形式：TO-220
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：18
PD* (W) 25°C：90
RDS(ON) (mΩ max) at VGS= 10V：0.18
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：HID SMPS

PTS4503

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±12/±16
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：6.5/-5.5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：26/28
RDS(ON) (mΩ max) at VGS= 4.5V：35/45
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：無線充電、移動電源

PTF630

封裝形式：TO-220F
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：0.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：HID SMPS

PTP630

封裝形式：TO-252
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：90
RDS(ON) (mΩ max) at VGS= 10V：0.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： HID SMPS

PTS4606

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：5.8/-5.1
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：31/48
RDS(ON) (mΩ max) at VGS= 4.5V：43/72
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：無線充電、移動電源

PT4606

封裝形式：SOP8
類型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：5.8/-6.5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：31/46
RDS(ON) (mΩ max) at VGS= 4.5V：43/72
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用：無線充電、移動電源

PTD20N20

封裝形式：TO-252
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：45
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： TV

PTY20N20

封裝形式：TO-263
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：60
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： TV

PTP20N20

封裝形式：TO-252
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：60
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： TV

PTD10N20

封裝形式：TO-252
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：3
ID* (A) 25°C：10
PD* (W) 25°C：25
RDS(ON) (mΩ max) at VGS= 10V：135
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： TV

PTP10N20

封裝形式：TO-220
類型：單N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：3
ID* (A) 25°C：10
PD* (W) 25°C：30
RDS(ON) (mΩ max) at VGS= 10V：135
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型應(yīng)用： TV
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